darlington transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ces 30 vdc collectorbase voltage v cb 40 vdc emitterbase voltage v eb 10 vdc collector current e continuous i c 1.0 adc total power dissipation @ t a = 25 c derate above 25 c p d 625 12 mw mw/ c total power dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 2.0 madc, v be = 0) v (br)ces 30 e e vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 40 e e vdc emitterbase breakdown voltage (i e = 100 nadc, i c = 0) v (br)ebo 10 e e vdc collector cutoff current (v ce = 30 vdc) i ces e e 500 nadc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo e e 100 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo e e 100 nadc on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 2 1 publication order number: bc517/d bc517 case 2911, style 17 to92 (to226aa) 1 2 3 collector 1 base 2 emitter 3
bc517 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (1) dc current gain (i c = 20 madc, v ce = 2.0 vdc) h fe 30,000 e e e collectoremitter saturation voltage (i c = 100 madc, i b = 0.1 madc) v ce(sat) e e 1.0 vdc baseemitter on voltage (i c = 10 madc, v ce = 5.0 vdc) v be(on) e e 1.4 vdc smallsignal characteristics currentgain e bandwidth product (2) (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) f t e 200 e mhz 1. pulse test: pulse width 2.0%. 2. f t = |h fe | ? f test r s i n e n ideal transistor figure 1. transistor noise model
bc517 http://onsemi.com 3 noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k w ) figure 5. wideband noise figure r s , source resistance (k w ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 m a 10 m a bandwidth = 1.0 hz i c = 1.0 ma 100 m a 10 m a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 m a 100 m a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 m a 100 m a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
bc517 http://onsemi.com 4 smallsignal characteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( m a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. aono voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) q t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0
bc517 http://onsemi.com 5 figure 12. thermal response t, time (ms) 1.0 () 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector-emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z q jc(t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc(t) z q ja(t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja(t) 1.0 ms 100 m s t c = 25 c 1.0 s design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p
bc517 http://onsemi.com 6 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1
bc517 http://onsemi.com 7 notes
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